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| TECHNICAL DATA IN74HCT30A 8-Input NAND Gate The IN74HCT30A is high-speed Si-gate CMOS device and is pin compatible with low power Schottky TTL (LSTTL) . The device provide the 8-input NAND function. * Outputs Directly Interface to CMOS, NMOS, and TTL * Operating Voltage Range: 4.5 to 5.5 V * Low Input Current: 1.0 A * High Noise Immunity Characteristic of CMOS Devices ORDERING INFORMATION IN74HCT30AN Plastic IN74HCT30AD SOIC TA = -55 / 125 C for all packages LOGIC DIAGRAM A B PIN ASSIGNMENT A 1 2 3 4 5 6 7 14 13 12 11 10 9 8 V CC C D Y E F G H B C D E F GND H G -. Y FUNCTION TABLE PIN 14 =VCC PIN 7 = GND Inputs A L X X X X X X X H B X L X X X X X X H X X L X X X X X H D X X X L X X X X H E X X X X L X X X H F X X X X X L X X H G X X X X X X L X H H X X X X X X X L H Output Y H H H H H H H H L X = don't care 1 IN74HCT30A MAXIMUM RATINGS* Symbol VCC VIN VOUT IIN IOUT ICC PD Tstg TL Parameter DC Supply Voltage (Referenced to GND) DC Input Voltage (Referenced to GND) DC Output Voltage (Referenced to GND) DC Input Current, per Pin DC Output Current, per Pin DC Supply Current, VCC and GND Pins Power Dissipation in Still Air, Plastic DIP** SOIC Package** Storage Temperature Lead Temperature, 1 mm from Case for 10 Seconds (Plastic DIP or SOIC Package) Value -0.5 to +7.0 -1.5 to VCC +1.5 -0.5 to VCC +0.5 20 25 50 750 500 -65 to +150 260 Unit V V V mA mA mA mW C C *Maximum Ratings are those values beyond which damage to the device may occur. Functional operation should be restricted to the Recommended Operating Conditions. **Derating - Plastic DIP: - 10 mW/C from 65 to 125C SOIC Package: : - 7 mW/C from 65 to 125C RECOMMENDED OPERATING CONDITIONS Symbol VCC VIN, VOUT TA tr, tf Parameter DC Supply Voltage (Referenced to GND) DC Input Voltage, Output Voltage (Referenced to GND) Operating Temperature, All Package Types Input Rise and Fall Time (Figure 1) VCC =2.0 V VCC =4.5 V VCC =6.0 V Min 4.5 0 -55 0 0 0 Max 5.5 VCC +125 1000 500 400 Unit V V C ns This device contains protection circuitry to guard against damage due to high static voltages or electric fields. However, precautions must be taken to avoid applications of any voltage higher than maximum rated voltages to this high-impedance circuit. For proper operation, VIN and VOUT should be constrained to the range GND(VIN or VOUT)VCC. Unused inputs must always be tied to an appropriate logic voltage level (e.g., either GND or VCC). Unused outputs must be left open. 2 IN74HCT30A DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND) Symbol Parameter Test Conditions VCC V Guaranteed Limit 25 C to -55C 2.0 2.0 0.8 0.8 4.4 5.4 3.98 0.1 0.1 0.26 -0.1 0.1 2.0 85 C 2.0 2.0 0.8 0.8 4.4 5.4 3.84 0.1 0.1 0.33 -1.0 1.0 20 125 C 2.0 2.0 0.8 0.8 4.4 5.4 3.70 0.1 0.1 0.4 -1.0 1.0 40 A A A V V Unit VIH Minimum High-Level Input Voltage Maximum Low -Level Input Voltage Minimum High-Level Output Voltage VOUT0.1V or VOUT VCC-0.1V IOUT 20 A VOUT0.1V or VOUT VCC-0.1V IOUT 20 A VIN=VIH or VIL IOUT - 20 A VIN= VIH or VIL IOUT - 4.0 mA 4.5 5.5 4.5 5.5 4.5 5.5 4.5 4.5 5.5 4.5 5.5 5.5 5.5 VIL V VOH V VOL Maximum Low-Level Output Voltage IIL IIH ICC Maximum Low-Level Input Leakage Current Maximum High-Level Input Leakage Current Maximum Quiescent Supply Current (per Package) Maximum Additional Quiescent Supply Current VIN= VIH or VIL IOUT 20 A VIN= VIH or VIL IOUT 4.0 mA VIN= 0 V VIN= VCC VIN=VCC or 0 V IOUT=0 A VIN=2.4V any one input, VIN=0 V or VCC, others inputs IOUT=0 A ICCT 5.5 -55C 2.9 25C / -125C 2.4 m 3 IN74HCT30A AC ELECTRICAL CHARACTERISTICS (CL=50pF,Input tr=tf=6.0 ns) VCC Symbol Parameter V Guaranteed Limit 25 C to -55C 41 15 10 85C 125C Unit tPHL, tPLH tTHL, tTLH CIN Maximum Propagation Delay (Figure 1) Maximum Output Transition Time (Figure 1) Maximum Input Capacitance Power Dissipation Capacitance (Per Gate) 4.5 4.5 5.0 52 19 10 63 22 10 ns ns pF TA=25C,VCC=5.0 V 27 pF CPD Used to determine the no-load dynamic power consumption: PD=CPDVCC2f+ICCVCC tf 0.9 tr V1 0.9 Input V2 0.1 0.1 V2 GND tPHL VCC tPLH 0.9 V2 0.1 0.9 V2 0.1 Output 0V tTLH V1 = 3 V V2 = 1.3 V tTHL Figure 1. Switching Waveforms VCC VI PULSE GENERATOR RT DEVICE UNDER TEST VO Termination resistance RT - should be equal to ZOUT of pulse generators CL 50 pF Figure 2. Test Circuit 4 IN74HCT30A N SUFFIX PLASTIC DIP (MS - 001AA) A 14 8 B 1 7 Dimension, mm Symbol A B C MIN 18.67 6.1 MAX 19.69 7.11 5.33 0.36 1.14 2.54 7.62 0 2.92 7.62 0.2 0.38 10 3.81 8.26 0.36 0.56 1.78 F L D F C -T- SEATING N G D 0.25 (0.010) M T K PLANE G H H J M J K L M N NOTES: 1. Dimensions "A", "B" do not include mold flash or protrusions. Maximum mold flash or protrusions 0.25 mm (0.010) per side. D SUFFIX SOIC (MS - 012AB) Dimension, mm 8 A 14 Symbol A MIN 8.55 3.8 1.35 0.33 0.4 1.27 5.27 0 0.1 0.19 5.8 0.25 MAX 8.75 4 1.75 0.51 1.27 H B P B C 1 G 7 C R x 45 D F G -TD 0.25 (0.010) M T C M K SEATING PLANE H J F M J K M P R 8 0.25 0.25 6.2 0.5 NOTES: 1. Dimensions A and B do not include mold flash or protrusion. 2. Maximum mold flash or protrusion 0.15 mm (0.006) per side for A; for B 0.25 mm (0.010) per side. 5 |
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